— Second-generation devices provide improved surge peak forward
current and figure of merit, now in a surface-mount type package —
Electronic Devices & Storage Corporation (TDSC) has enhanced its
diode portfolio with the addition of six Schottky barrier diodes (SBDs)
fabricated with silicon carbide (SiC) and housed in surface-mount
packages. Volume shipments start today.
Until now, TDSC has focused on SiC SBDs in through-hole packages. The
addition of TDSC’s first SiC SBDs in surface-mount packages (nicknamed
DPAK) meets customer needs to reduce system size and thickness.
The new SiC SBDs incorporate Toshiba’s latest second-generation chip,
which delivers improvements in surge peak forward current (IFSM)
and figure of merit (VF•Qc*1). The
devices offer enhanced ruggedness and low loss, which helps to improve
system efficiency and simplify thermal design.
TDSC will continue to expand its product portfolio in order to help
improve the efficiency and reduce the size of communications equipment,
servers, inverters and other products.
- High surge peak forward current: Approx. 7 to 9.5 times the current
- Low figure of merit (VF•Qc): About 1/3 lower
than first generation products, indicating high efficiency.
- Surface-mount package: Enables auto mounters and helps to reduce
system size and thickness.
The new SiC SBDs are suitable for a wide range of commercial and
industrial applications, including PFC circuitry in high-efficiency
- Consumer and OA products: power supply for large screen 4K LCD & OLED
TV sets, projectors, multifunction copiers, etc.
- Industrial equipment: power supply for telecommunication base
stations, PC servers, solar microinverters, etc.
- For circuits: power factor correction (PFC) circuits; micro inverter
circuits; chopper circuits (various power supplies of hundreds of
watts or more).
- Free-wheel diode for switching device.
|Package||Absolute Maximum Ratings||Electrical Characteristics|
Surface-mount type DPAK /
Equivalent to TO-252
 Qc : Electric charge amount of capacitance Cj
between 0.1 V and 400 V.
Follow the link below for more on TDSC’s SiC Schottky Barrier Diode
Power Device Sales & Marketing Department
*Information in this document, including product prices and
specifications, content of services and contact information, is current
on the date of the announcement but is subject to change without prior
About Toshiba Electronic Devices & Storage
Toshiba Electronic Devices & Storage Corporation (TDSC) combines the
vigor of a new company with the wisdom of experience. Since being spun
off from Toshiba Corporation in July 2017, we have taken our place among
the leading general devices companies, and offer our customers and
business partners outstanding solutions in discrete semiconductors,
system LSIs and HDD.
Our 19,000 employees around the world share a determination to maximize
the value of our products, and emphasize close collaboration with
customers to promote co-creation of value and new markets. We look
forward to building on annual sales now surpassing 700-billion yen (US$6
billion) and to contributing to a better future for people everywhere.
out more about us at https://toshiba.semicon-storage.com/ap-en/company.html
Toshiba Electronic Devices & Storage
Chiaki Nagasawa, +81-3-3457-4963