Efficient Power Conversion (EPC) Publishes Reliability Report Documenting GaN Technology Reliability After Millions of Device Hours of Rigorous Stress Testing

EPC Phase
Eight Reliability Report
documents a combined total of over 8
million GaN device-hours with zero failures.
The report examines,
in detail, the stress tests that EPC devices are subjected to prior to
release as qualified products and analyzes the physics of failure.

announces its Phase
Eight Reliability Report
showing the results of the
rigorous set of JEDEC-based qualification stress tests eGaN FETs and
integrated circuits undertake prior to being considered qualified

In this report, product-specific detailed stress test results for over
millions of actual device hours are provided. In addition to product
qualification stress testing, due diligence is necessary in other areas
of reliability such as field experience, failures over device
operational lifetime, and board level reliability. More specifically,
the three sections of tests covered in this Phase Eight Reliability

I: Field Reliability Experience

  • Field Failures Examined
  • Assembly Failures
  • Applications Failures
  • Intrinsic Die Qualification

II: Early Life Failure and Wear-out Capability

  • Early Life Failure Rate
  • Electromigration

III: Board Level Reliability and Thermo-mechanical Capability

  • Intermittent Operating Life
  • Temperature Cycling
  • Board-Level Reliability

This report, coupled with the excellent field reliability of eGaN FETs
and ICs given in the Phase
Seven Reliability Report
, which documented the accumulation of
over 17 billion device operation hours combined with a very low failure
rate below 1 FIT (failures per billion hours), demonstrates that the
stress-based qualification testing is capable of ensuring reliability in
customer applications. The cumulative reliability information compiled
shows that eGaN FETs and ICs have solid reliability and are able to
operate with very low probability of failures within reasonable
lifetimes of end products manufactured today.

According to Dr. Alex Lidow, CEO and co-founder of EPC, “Demonstration
of the reliability of new technology is a major undertaking and one that
EPC takes very seriously. The tests described in this report, along with
the reported results, show that EPC gallium nitride products have the
requisite reliability to displace silicon as the technology of choice
for semiconductors.”

About EPC

is the leader in enhancement mode gallium nitride based power management
devices and was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
, wireless
power transfer
, envelope
, RF transmission, power
, remote
sensing technology (LiDAR)
, and class-D
audio amplifiers
with device performance many times greater than the
best silicon power MOSFETs.


eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc.


Efficient Power Conversion
Joe Engle, 310-986-0350
[email protected]